Abstract
We have investigated the effect of the misorientation (001) InP substrates on the optical properties of submonolayers of InAs in InP grown by metalorganic chemical vapor deposition. InAs submonolayers were systematically studied using low temperature photoluminescence (PL), photoluminescence excitation spectroscopy and temperature-dependent, excitation density PL. For submonolayer samples with oriented substrates, the observed PL linewidths and energies are satisfactorily explained within a two-dimensional (2D) quantum well picture. The formation of InAs isolated quantum dots which is found in the submonolayer samples with misoriented substrates towards (110) orientations, however, results in 0D exciton localization.
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