Abstract
AbstractWe present photoluminescence measurements on single InGaN quantum dots grown by metalorganic vapor phase epitaxy. The spatially and spectrally resolved luminescence properties of the single quantum dots were measured using low‐temperature micro‐photoluminescence spectroscopy. The observed sharp emission lines of the quantum dots were characterized by excitation density dependent measurements. The photoluminescence of individual quantum dots can easily be detected for temperatures up to 150 K. In addition, temporal fluctuations of the emission peak positions of single quantum dots are attributed to spectral diffusion processes. Indications for recombination processes from excited states are observed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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