Abstract
AbstractWe present photoluminescence measurements on single InGaN quantum dots (QDs) grown by metalorganic vapor phase epitaxy, and on monolithicly grown GaN‐based quantum well airpost pillar microcavities. The observed sharp emission lines of the quantum dots are characterized by excitation density dependent measurements. The photoluminescence of individual quantum dots can easily be detected for temperatures up to 150 K. The micro‐photoluminescence measurements on microcavities reveal three‐dimensional confined optical modes which are not seen in the luminescence of the simply planar cavity. The realization of rather temperature stable QDs as well as of nitride based microcavity samples are promising with respect to the intended implementation of QD layers into microcavities. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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