Optical Properties of Silicon Nano-Structures: Metal Assisted Chemical Etching and a Two-Stage Ion Implantation

Abstract

Two different methods of dual metal ion implantation technique and metal-assisted chemical etching are used to fabricate silicon nanostructures. Raman scattering and photoluminescence techniques have been employed to study the optical properties of formed Si nanostructures. Scanning Electron Microscopy images indicate the change in the surface morphology of Si nanowires with respect to the etching time. Dual ion implantation sample and metal-assisted chemical etching, prepared for 45 min exhibit similar optical properties. With a possible mechanism of their formation at room temperature, synthesizability of Si NWs in large scale for commercial purposes is discussed. It is expected that these Si NWs have got potential applications in optoelectronics, photonics and sensors.