Optical properties of silicon carbonitride films produced by plasma-induced decomposition of organic silicon compounds

Abstract

Optical properties (refractive index; UV, visible, and IR transmission spectra; optical bandgap) of silicon carbonitride SiCxNy films, promising materials for silicon photonic devices and microelectronics, have been studied. The films have been synthesized by rf plasma-enhanced chemical vapor deposition with thermal activation from parent organosilicon compounds in mixtures with helium, ammonia, nitrogen, or oxygen at a reduced pressure and temperatures of 373–1023 K. The parent substances used are aminosilane- and silazane-series organosilicon precursors.