Optical properties of Si-doped and Be-doped InAlAs lattice-matched to InP grown by molecular beam epitaxy

Abstract

In this paper, we determine the optical constants and carrier mobilities of Si-doped and Be-doped InAlAs lattice matched to InP. The samples were grown using molecular beam epitaxy and characterized using Hall measurements, variable angle spectroscopic ellipsometry, and room temperature photoluminescence spectroscopy. A Moss-Burstein shift in the fundamental absorption edge was observed in both Si-doped and Be-doped materials. We fitted a multiple-oscillator, critical point model to the dielectric function of the materials extracted using the spectroscopic ellipsometry. The tabulated input parameters of this model allow for accurate calculations of the dielectric function of doped InAlAs to be made, which is useful information for simulating a variety of InP-based optoelectronic devices.