Abstract
High energy focused ion beam implantation of Ga is used to interdiffuse AlGaAs/GaAs quantum wells. Results from low temperature cathodoluminescence, time-decay photoluminescence measurements and photolumuniscence excitation spectroscopy indicate a good quality of the interdiffused quantum wells. The broadened luminescence peaks are explained by spatial inhomogeneities of the interdiffusion. Quantum boxes were fabricated and studied by cathodoluminescence line scanning. The introduction of a few monolayers of InGaAs close to the quantum well resulted in a remarkable improvement of the homogeneity of the interdiffusion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
