Abstract
Optical properties of photo-oxidized polyfluorene (PFO), which is of practical important information for PFO based polymer light emitting diodes, have been studied by photoluminescence (PL) spectroscopy. PFO thin films were oxidized by the irradiation of a He-Cd laser (1 = 325 nm) and the photo-oxidized states were characterized by optical absorption, Fourier transform infrared absorption and electron spectroscopy for chemical analysis measurements. Temperature dependence of PL intensity of PFO is well described by a thermal quenching model, from which it is found that non-radiative decay enhances by photo-oxidation and that the height of potential barrier for the singlet excited states to the oxygen-related quenching centers is ∼ 50 meV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
