Optical properties of Pb1−xSnxSe thin layers grown by HWE

Abstract

This paper concerns the optical study of Pb1−xSnxSe /Si layers elaborated by the Hot Wall Epitaxy (HWE) technique. Optical reflection and transmission were measured for all the composition range in the PbSe — SnSe system by using a Fourier Transform Infrared Spectrometer (FTIR). From a theoretical model and the experimental reflections coefficients R, RP for respectively layer-substrate and substrate-layer and the transmission coefficient T, we have determined simultaneously the refractive index n, the extinction coefficient k and the thickness d. Then the composition and temperature energy gap dependence have been established.