Abstract
The Hot Wall Epitaxy (HWE) technique has been employed for the first time to grow thin epitaxial films of cadmium phosphide (Cd3P2) on mica substrates at different substrate temperatures in the range 150 – 300°C. The films were characterised by X-ray diffraction and SEM. The lattice constants calculated from the Bragg reflection are in close agreement with those reported in ASTM data. The grain size of the films is observed to increase from 1 – 2 μm as the substrate temperature is increased from 150°C to 300°C. The resistivity of the as-grown sample is around 10 Ohm cm. Thermal probe method has indicated the films to be n-type. Optical absorption measurements yielded a bandgap value of 0.58 eV.
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