Abstract
The optical properties of silicon-on-insulator (SOI) samples, modified in Si thin film by multiple-time Si+ self-ion-implantation followed by annealing, have been well investigated. The SOI materials implanted by single energy can obtain many kinds of luminous centers, while the larger density appears in the samples implanted by multiple energy. After annealing at 700 °C, the sample implanted three times forms a luminescence peak with high luminescence intensity and narrow peak width near 0.8 eV. It is speculated that this peak is D1 peak and multiple implantation combined with high temperature annealing can promote the formation of D1 line luminous center in SOI.
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