Abstract
The possibility of using the ellipsometry method for investigation of the optical properties of multilayer films and structures is shown. The optical properties of structures HfO2/SiO2/Si, HfO2/Si, ZrO2/Si, Ta2O5/Si, and Al2O3/Si are studied. It is found that a layer of hafnium silicate is formed at the interface between the HfO2 film and Si. Annealing of the structures in oxygen shows that oxides studied are oxygen-permeable and that the thickness of SiO2 at the film-substrate interface increases. The growth rate of SiO2 layers depends on the chemical nature of an oxide. Al2O3 films are impermeable for oxygen diffusion. The production of layers of alloys (Al2O3) x (HfO2)1 − x is optimized, which allows one to obtain layers with a homogeneous distribution of elements over the thickness.
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