Abstract
Theory shows that in a superlattice consisting of very thin alternating layers of Si and Ge the bulk signature of the Si conduction band wave function is altered and the selection rule for optical transitions peculiar to indirect gap materials is broken. Such structures are also predicted to give rise to novel nonlinear phenomena and to strong optical spectra in the far infrared. However, recent experimental data suggest that the optical spectra of Si-Ge cannot be accounted for in terms of the ideal (infinite and defect free) superlattice model. A more realistic theory is needed which will account for the effect upon optical properties of the finite dimensions, defects and electric fields peculiar to Si-Ge structures. We find that these effects alter the assessment of the key material parameters of Si-Ge.
Published Version
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