Abstract
ABSTRACTThe infrared optical absorption properties near and above the fundamental absorption edge of MBE grown undoped GaInAsSb quaternary semiconductor alloy deposited on GaSb and GaAs substrates have been measured and analyzed at room temperature by means of a Fourier Transform Infrared Spectrometer, and were found to be fully characterized by the interband transition theory and Urbach's rule. The optical band gap of MBE-GaInAsSb has been determined using a linear extrapolation of (ɑhv )2 as a function of the photon energy hv, and the refractive index n deduced from the interference pattern, which shows good agreement with the theory of Sadao Adachi's.
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