Abstract
Low-temperature photoluminescence and photoconductivity studies of high quality InGaAs-InP quantum wells grown by metalorganic chemical vapor deposition at atmospheric pressure are reported. The best luminescence linewidth obtained for a 100-Å well is found to be 7.9 meV. The residual line broadening is discussed in terms of interface fluctuations, and is compared directly with structural properties as determined by high resolution lattice imaging transmission electron microscopy.
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