Abstract
InGaN bulk layers and single quantum wells were grown on 1.4 to 2.4 μm thick GaN on sapphire films by atmospheric pressure metalorganic chemical vapour deposition (AP-MOCVD). The morphology of the epitaxial layers was strongly affected by the VIII ratio in the gas phase. The incorporation efficiency of indium was observed to increase with higher growth rates and decreasing temperature, but was independent of the VIII ratio in the investigated parameter range. In0.16Ga0.84N single quantum wells showed intense quantum well related luminescence at room temperature, with a full width at half maximum of 7.9 nm at a thickness of 50 Å. Single quantum wells embedded in InGaN of graded composition showed superior properties compared to quantum wells with In0.04Ga0.94N barriers of constant composition.
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