Abstract
InAs/AlSb superlattices (SLs) have been studied by gas source molecular beam epitaxy/gas source migration enhanced epitaxy (GSMBE/GSMEE). Reflection high-energy electron diffraction (RHEED) intensity oscillation measurements show that In and Sb atoms move toward the surface during MEE growth through the exchange process of constituent atoms, although the movement of In atoms can be reduced by lowering the growth temperature. Raman scattering measurements on the InAs/AlSb SLs show that the formation of atomically controlled heterointerfaces is difficult. However, PL (photoluminescence) measurements show that the optical properties of InAs/AlSb quantum wells (QWs) depend strongly on the shutter sequences at the interfaces. 77 K PL from the QWs with InSb-type interfaces is much stronger than that with AlAs-type interfaces, and their temperature variation of the former is much weaker than that of the latter.
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