Abstract
The surface photoabsorption (SPA) signal from the GaAs (001) surface was measured at the angle of incidence between 69° and 83°. We found two processes of As desorption during H2 purge after AsH3 injection. The SPA signals for the two processes had different time constants and different angle dependence. The angle dependence indicated that the change of the SPA signal was due to both the optical absorption of the surface and the refractive index change of the surface layer.
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