Abstract
We report the growth and characterization of a new dilute nitride infrared material: InN(As)Sb. InNAsSb single quantum wells (SQWs) and InNSb self-assembled quantum dots (QDs) were grown on both InAs and GaAs substrates by solid-source molecular beam epitaxy. High-quality InNAsSb epilayers were realized by optimizing the nitrogen incorporation growth conditions. Both secondary-ion mass spectroscopy and x-ray diffraction measurements confirmed a nitrogen incorporation of 1%. Temperature- and power-dependent photoluminescence measurements were conducted and revealed a luminescence emission at 4.03 μm from localized states and ∼4.3 μm from the ground-state transition in InNAsSb SQWs. InNSb QDs exhibited a 10 K photoluminescence peak at 3.6 μm.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
