Abstract
The cubic phase of III-nitrides has received much less attention than the hexagonal structure, because of difficulties inherent to the growth of this meta-stable phase. However, the possibility to avoid the effects of piezoelectric fields in cubic phase GaN grown on non-polar substrates gives new interest for this material. In this work, we present optical properties (photoluminescence and photoreflectance) of cubic GaN layers grown by MBE on c-SiC/Si pseudo-substrates at room and low temperature. Photoluminescence properties of doped (n- and p-type) c-GaN layers and of AlGaN layers are also presented.
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