Year-end Sale % OFF 
Abstract
Atomically controlled InGaAs/InP quantum well (QW) structures are grown on (001) InP substrates at 350°C by gas source migration-enhanced epitaxy. Raman scattering measurement suggests the formation of tailored heterointerfaces: QWs having only InAs-type interfaces show the absence of Ga-P bonds, while QWs having InGaP-type interfaces indeed show the preference of Ga-P bonds. 4.2 K photoluminescence (PL) spectra for InGaAs/InP QWs show the very narrow line width comparable to the narrowest line width reported so far. PL peak energy variation with well thickness clearly depends on the heterointerface type, suggesting that the potential shifts to higher energies at the InGaP interfaces, while it drops at the InAs interfaces. Theoretical calculations assuming the formation of controlled heterointerfaces reproduce the experimentally observed PL energy variation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
