Abstract
We report on the spontaneous formation of an AlInN interlayer in plasma-assisted molecular beam epitaxial growth of InN on sapphire substrates. Under our growth conditions, and with an initial growth stage corresponding to the best attainable InN film quality, the AlInN layer has a thickness of ≈︂100 nm and an aluminum content of around 0.3. The layer possesses a good crystalline quality as manifested by transmission electron microscopy and X-ray diffraction (XRD) studies. No evidence of binary phase separation within the layer is found by XRD and optical absorption measurements. The energy gap bowing of the AlInN is well approximated by the expression for a disordered alloy. The possibility of AlInN to emit light is demonstrated by photo- and cathodoluminescence measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
