Abstract

The optical properties of amorphous and nanocrystalline tapes of CoFeNiSiB alloys and the ac magnetoresistive effect in them have been investigated. It is shown that the magnetoresistive effect in these alloys increases by about a factor of two after low‐temperature treatment and subsequent laser annealing of these tapes in an external magnetic field. Correlation between the anomalous behavior of the dielectric function of these alloys in the IR region of the spectrum and their magnetoresistive characteristics after thermal annealings has been established. The interrelation between the density of localized electronic states near the Fermi level and the value of the magnetoresistive effect has been revealed. The influence of the induced magnetic anisotropy on the transverse permeability in amorphous and nanocrystalline CoFeNiSiB alloys and, consequently, also on the magnetoresistive effect has been analyzed.

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