Abstract
InAs/GaAs bilayer quantum dots (BQDs) are interesting structures for long wavelength emission due to its ability to tune the areal density and dot size separately. However, the need for two sets of growth rate and temperature for the respective QD layers complicates the growth procedures. Furthermore, the highest areal density reported for BQDs with 1.3 μm emission is only in the low 1010 cm−2. In this letter, we investigated the effect of GaAs spacer thickness and monolayer coverage of the active QDs on the optical properties of InAs/GaAs BQDs grown with constant growth rate and temperature. Consequently, high areal density (∼1.2×1011 cm−2) and room temperature photoluminescence emission at 1304 nm with spectral width of 24 meV was obtained.
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