Optical properties and device characteristics of 2-(antipyrin-4-ylhydrazono)-2-(4-nitrophenyl)acetonitrile thin films for photodiode applications

Abstract

2-(Antipyrin-4-ylhydrazono)-2-(4-nitrophenyl)acetonitrile (AHNA) films were deposited via thermal evaporation technique. The optical properties of AHNA films and electrical characteristics of Au/AHNA/n-Si/Au heterojunction diode have been reported. The optical properties of AHNA films were investigated using the spectrophotometric measurements of optical transmittance and reflectance over spectral range 190–2500nm. The films have indirect allowed optical band gap of 3.6eV. The refractive index of the films was calculated and the dispersion parameters of the films were determined on the light of the single oscillator model. The electrical properties of Au/AHNA/n-Si/Au heterojunction diode were studied in terms of current–voltage characteristics. The device showed rectification behaviour with a rectification ratio of 100 at ±1V. The conduction mechanisms and diode parameters such as ideality factor, barrier height and series resistance of the device were determined. The device under illumination showed photovoltaic properties. The short circuit current and open circuit voltage were found to be function of illumination intensity. The device satisfies the conditions to be used as photodiode.