Structural, optical properties and junction characteristics, Au/n-KDDQ/p-Si/Al, of potassium-2,3-dicyano-5,6-dichloro-1,4-benzo-quinone (KDDQ) films

Abstract

Potassium-2, 3-dicyano-5,6-dichloro-1,4-benzo-quinone (KDDQ) complex as a powder form was synthesized and prepared as a thin film using the conventional thermal evaporation tool. The crystal structure of the KDDQ compound as a powder and thin film forms were analyzed using X-ray diffraction (XRD) and Fourier transformation infrared (FTIR) techniques. The XRD pattern of powder KDDQ shows a polycrystalline structure with the monoclinic system. The optoelectrical properties of KDDQ as-deposit thin film and electrical characteristics of Au/n-KDDQ/p-Si/Al heterojunction device has been investigated. The optical properties of KDDQ films were studied using the spectrophotometric measurements of optical transmittance and reflectance over spectral range 190–2500 nm. The KDDQ compound as-deposited thin films have direct allowed transitions. In addition, the optoelectrical parameters have been calculated for KDDQ films such as the high-frequency dielectric constant, the dielectric loss factor, the plasma frequency, optical relaxation time, optical mobility and resistivity through the calculated refractive index. The current-voltage characteristic of the fabricated Au/n-KDDQ/p-Si/Au heterojunction diode was studied in the temperature range 303–393 K. The device showed rectification behavior with a rectification ratio of 0.7 × 103 at ±1 V. Thus, the diode parameters such as ideality factor, barrier height, series resistance, and shunt resistance were calculated, and the conduction mechanisms can be defined.