Abstract
Eutectic Sb70Te30 fast-growth material is one of the promising candidates for high data transfer rate recording. However, it also shows the disadvantage of poor thermal stability. Germanium, with a high value of glass transition temperature, is expected to play the role of thermal stabilizer. It was found that the effect of Ge doping on reflectivity difference between as-deposited and annealed states is not significant. However, the addition of Ge element into Sb70Te30 can reduce the initialization or erasure power, and increase the stability of the phase change recording media at room temperature at the same time. Unfortunately, doping Ge element would also slow down the crystallization speed of eutectic Sb70Te30 recording film.
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