Abstract
We report on optical properties and carrier dynamics of polarity controlled ZnO films grown on (0001) Al2O3 by Cr-compound intermediate layers using photoluminescence (PL), PL excitation, temperature dependent PL, and time-resolved PL techniques. At low temperature, a dominant donor-bound exciton peak at 3.36 eV has been observed in the O-polar ZnO grown on Cr2O3 intermediate layer, while a dominant acceptor-bound exciton peak at 3.32 eV has been observed in the Zn-polar ZnO grown on CrN intermediate layer. Native defects and/or impurities introduced by the Cr-compound intermediate layers play an important role in the optical properties of the polar ZnO samples.
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