Optical probing of low-pressure solution grown GaN crystal properties

Abstract

The structural and optical properties of self-nucleated crystals grown by a near atmospheric pressure solution growth method are presented. High-resolution room temperature Raman scattering studies demonstrate that stress-free crystals with low free-electron background have been produced. Low and room temperature photoluminescence experiments confirm the presence of shallow donors and an unknown shallow acceptor. Large relative intensity variations of the emission bands assigned to recombination process involving donors and acceptor, resulting from significant changes in the incorporation and/or activation of defect associated with each recombination channel, reflect major changes in the intrinsic material properties.