Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations

Abstract

It is shown that, at helium temperatures, relaxed CdTe films reveal isolated emitters, the properties of which indicate their relation with a weakly perturbed fragment of the Shockley dislocation core. The polarization and spatial distribution of such emitters in CdTe/Si and CdTe/GaAs virtual substrates contain information on the structure of extended defects in a relaxed CdTe layer, which are important for HgCdTe epitaxy.