Abstract
The authors present results of a perturbation theory study of the combined effects of composition and anisotropic in-plane strain on the optical polarization properties of the three interband transitions in the vicinity of the fundamental energy gap of wurtzite group-III-nitride alloy films, pseudomorphically grown on GaN substrates with nonpolar orientation such as M-plane GaN(11¯00). Valence band mixing induced by the anisotropic in-plane strain is shown to have a dramatic influence on the optical polarization properties. The results indicate that an increased efficiency of light emission in the visible spectral range can be achieved with compressively strained InxGa1−xN active layers. While AlxGa1−xN layers under tensile strain will exhibit a very poor light emission efficiency in the ultraviolet (UV) spectral range, efficient emission in the UV range can instead be achieved with InxAl1−xN films. These results also hold for alloy films on A-plane GaN(112¯0) substrates.
Published Version
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