Abstract
Characterization of lattice properties of monocrystalline semiconductors (MS) has been rapidly advanced. Of particular interest is the use of shear strains induced by optoacoustic-bulk-waves. However, this technique has been hindered owing to the lack of quantitative correlations between optoacoustic-bulk-waves-induced shear strains and anisotropic photoelasticity of MS. Motivated by this, a multiphysics model is developed to interrogate the coupling phenomena and interaction between optical polarization and shear strains in MS. With the model, perturbation to the polarization of a monochromatic laser beam, upon interacting with optoacoustic waves in MS, is scrutinized quantitatively. Experimental results are in agreement with those from the model, both revealing the polarization perturbed by shear strains quantitatively depends on the crystal orientation and crystal-structure-related symmetry, which are jointly governed by mechanical/photoelastic/optical anisotropies of MS. The approach has paved a new way for selectively acquiring high-sensitivity shear components of optoacoustic-ultrasonic-waves for in situ, high-definition characterization of anisotropic MS.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
