Optical Path Length Factor at Near-Bandgap Wavelengths in Si Solar Cells

Luigi Abenante

doi:10.1109/ted.2006.885518

Abstract

By using the Rand and Basore (R&B) physical model for light trapping, a particular analytical expression for near-bandgap optical path length factor Z o is derived for the case where back surface reflectivity R BACK is equal to unity (R BACK = 1). This expression shows that according to the R&B physical model, at R BACK = 1, Z o has a finite value. At R BACK = 1, the R&B expression for Z o is shown to diverge. By using the original R&B derivation procedure, a new expression for Z o is obtained, which at R BACK = 1, reduces to the aforementioned particular expression for ideal back surface reflectance. The new expression is immune from the physical incongruity and tendency to overestimate Z o that affect the R&B expression. By using the new expression, a relationship between Z o and the Yablonovitch and Cody (Y&C) absorption-enhancement factor is derived for devices where parasitic absorption predominantly occurs at backside reflector. This relationship is shown to be in agreement with the literature. In the derivation, a connection between the approaches to light trapping of R&B and Y&C is exploited. This connection allows obtaining a new method to evaluate R BACK at near-bandgap wavelengths in most Si solar cells. The new method is checked on two real Si solar cells and found to provide plausible results. Compared to the method used by R&B, the method presented in this paper is shown to be more reliable

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