03/01842 Structural and electrical properties of CuGaS 2 thin films by electron beam evaporation : Jeong, W.-J. and Park, G-C. Solar Energy Materials and Solar Cells, 2003, 75, (1–2), 9–100

Abstract

In order to manufacture high-efficiency Si solar cells with a passivated rear surface and local contacts, it is necessary to develop both an excellent rear-passivation scheme compatible with screen-printing technology and a robust patterning technique for local contact formation. In this work, we have fabricated Si solar cells on ∼130 μm thick substrates using manufacturable processing, where rear side was passivated with a plasma-enhanced chemical vapor deposited SiOx/SiNx/SiOxNy stack and local back contacts using laser. As a result of both the rear surface passivation stack and the laser-fired local contacts, cell efficiencies of up to 17.6% on a 148.6 cm2 Float-zone Si wafer and 17.2% for a 156.8 cm2 multicrystalline Si wafer were achieved. PC-1D calculations revealed that the cells had a back surface recombination velocity (BSRV) of ∼400 cm/s and a back surface reflectance (BSR) of over 90%, as opposed to standard full Al-BSF cells having a BSRV of ∼800 cm/s and a 70% BSR. This result clearly indicates that the new technique of the passivation scheme and the patterning using laser developed in this study are promising for manufacturing high-efficiency PERC-type thin Si solar cells.