Abstract
The optical orientation of electron spins in heavily doped semiconductor structures with a valence band that is split as a result of size quantization or uniaxial deformation is investigated theoretically. It is shown that lowering the Fermi level by doping and by lowering the temperature should lead to sharp changes in the photon-energy-dependence of the average spin of the excited electrons in structures excited by circularly polarized light. This effect is due to an interchange of the dominant contribution of transitions from a light-hole subband and transitions from the heavy-hole subband in absorption.
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