Abstract
AbstractLaser induced picosecond transient gratings are used to study carrier transport via free carrier and photorefractive nonlinearities in semi‐insulating undoped GaAs bulk crystals. Carrier lifetime (τR = 1.5 ns), hole and ambipolar mobilities (μh = 410 cm2 V−1 s−1, μa = 760 cm2 V−1 s−1) are measured directly and an electron mobility equal to 5200 cm2 V−1 s−1 is calculated. The optical properties of highly excited GaAs reveal deep donor EL2 transformation and intracenter absorption under picosecond excitation. Rotation of the diffracted beam polarization is observed for the first time in orientation of the grating vector along the crystallographic axis [001]. This signal is attributed to a strain field at dislocations in LEC‐grown GaAs wafers.
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