Abstract
The dependence of photocurrent properties on incident optical power in a quantum well p-i-n photodiode with a nonohmic contact was investigated. The experimental results showed that a significant absorption peak shift, in an extremely low optical power range, as well as a notable modification in the spectral shape at a higher power range was observed, without any external feedback element. The mechanism for the optical nonlinear responses can be explained in terms of the built-in field screening at the p-i-n junction or by taking into account the load characteristics of the Schottky-like contact.
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