Optical monitoring of the end point in thin film plasma etching

Abstract

An in-process optical technique is described for accurately monitoring the end point in plasma etching processes. A grating pattern is lithographed somewhere in the film to be etched. The grating modulation decreases as the film is etched out and the process may be monitored by measuring the diffraction of a low power He-Ne laser beam aimed at the grating. The etching end point is accurately detected by the disappearance of all diffracted orders. The laser beam does not need to be directed at normal incidence and so any available plasma etching equipment is suitable. The detection is carried out with low cost photovoltaic detectors but simple visual inspection is satisfactory also. Comparative experimental results are presented.