Abstract
We present optical modeling of superconducting nanowire single photon detector devices using an analytical approach based on the transfer matrix method. We find that the optimal dielectric layer thicknesses vary slightly with the thickness and fill factor of the NbN layer and explore novel device geometries that can be described as a stack of thin films, such as devices on multilayered substrates, free-standing membranes, and optical fiber facets. In addition, the analytical results here show the importance of accounting for coherence correctly when an integrated cavity is included in the device structure and the relative insignificance of an anti-reflection coating in most cases.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
