Optical modeling of high-performance GaAs based photodetector with periodic right triangular texturization on nanopillar arrays structure

Abstract

The high spectral responsivity of a photodetector depends upon proficient light absorption. In this respect, surface reflectance possesses a serious threat to the effective light absorption mechanism resulting in poor quantum efficiency. This paper presents an analytical investigation of a GaAs based periodic right triangular cut textured vertical nanopillar structural model deployed over a 50 μm × 50 μm planar front detector’s surface in reducing surface reflectivity. The geometrical analysis of the proposed model exhibits a 99.9% absorbance and 0.85 A W−1 photoresponsivity at 0.8 μm operating wavelength with a mere 0.5 μm depletion width.