Abstract
One of the most effective methods for cooling micro and nano devices to ultra low temperatures is the sideband method. Currently, this approach is being studied experimentally and theoretically. Theoretical results that relate to this method correspond to the case of the interaction of an electromagnetic field with a micro or nano resonator through radiation pressure. Obviously, if you choose a charged micro or nano resonator, the interaction will be different. In this paper, this case is considered and it is shown that cooling will be as effective as in the sideband method. The resulting final equation in the work, for the average value of the quantum number of the cooled resonator, has a surprisingly simple analytical form, which allows for the most complete analysis of the system under study.
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