Abstract
InN nanodots capped with GaN for temperatures from 600to730°C were investigated. While the dot emission intensity at 0.77eV decreased with increasing capping temperature, two extra visible emission bands appeared around 2.37eV (green band) and 2.96eV (violet band). Furthermore, x ray diffraction shows that the 71.7° and 70.2° peaks were tentatively attributed to InGaN alloy with In fractions of 14.8% and 34.2%, respectively. Moreover, the near-field measurements helped reveal the regions of different emissions. The violet-band mapping showed a spatial distribution in contrast to nanodot distribution but the green band showed a uniform distribution that apparently reflects the capping induced InGaN alloy.
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