Abstract
A hybrid GaN based microcavity was fabricated to investigate light matter coupling. The sample consists of a lattice matched AnInN/GaN bottom and a dielectric upper Bragg mirror. To increase the coupling strength an InGaN/GaN multi quantum well was embedded inside a 3 λ / 2 ( λ = 435 nm ) GaN cavity. The emission characteristics of the structure without top Bragg mirror were analyzed using photoluminescence spectroscopy. Two emission peaks at nearly fixed energy but changing intensity ratio with respect to the position on the sample arise. A detuning of the cavity mode and the excitonic emission into resonant condition is demonstrated by scanning across the wafer and temperature dependent measurements at about 50 K. Angle resolved photoluminescence investigations at the full hybrid structure exhibit two emission peaks. Predominantly excitonic behavior was found for the high and photonic-like behavior for the low energy peak. No clear anticrossing behavior was observed.
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