Abstract
In this project, a photoluminescence (PL) imaging technique was developed for probing electron diffusion in a semiconductor thin film. This technique was applied to investigate electron diffusion in GaAs for electrons of different kinetic energies. A tightly focused laser beam at 532 nm was used to generate electrons in an area of about 0.72 μm, and the spatial profile of the PL in an area much larger than that of the laser excitation site was imaged by a digital camera. Analysis of the PL images at different wavelengths indicated that the electrons maintain the same thermal distribution during diffusion and exhibit a common diffusion length of approximately 3.5 ± 0.2 μm. This paper is based on work presented at the Intel International Science and Engineering Fair in Phoenix, Arizona from Sunday, May 8, 2016 to Friday, May 13, 2016.
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