Abstract
AbstractZn1–xMnxTe and Cd1–xMnxTe crystals doped with phosphorus have been investigated by means of the measurement of Hall effect, photoluminescence and reflectance. By annealing under high pressure of nitrogen (up to 4 MPa) at T = 800 °C for a week, a free hole density as high as 5 × 1018 cm–3 was achieved in Zn0.95Mn0.05Te, while in Cd0.99Mn0.01Te it was only 8 × 1016 cm–3. The phosphorus acceptor binding energy in Zn0.975Mn0.025Te and Cd0.99Mn0.01Te was found to be (0.036 ± 0.002) eV and (0.054 ± 0.002) eV, respectively.
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