Abstract
The optical gain spectra of doped lattice-matched GaNAsBi–based single quantum well (SQW) was theoretically investigated using a (16 × 16) band anti-crossing (BAC) model combined with self-consistent calculation. For the sake of comparison, we computed the optical gain of both (i-n-i) and (i-p-i) doped well types in GaAs/GaNAsBi/GaAs quantum structure. The highest obtained material gain Gmax was 1.2×104cm−1 for (i-n-i) type doped with N2Dd=2.5×1012cm−2. We proposed investigating the p-i-n type structure to enhance the optical performance of GaAs/GaNAsBi/GaAs SQW. The Bi composition was optimized in order to obtain Te1−h1=1.55μm. The effect of well width on optical gain spectra was also discussed.
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