Abstract
The focus of the present study is the optical characterisation of the novel direct band gap material Ga(NAsP) monolithically grown on Si substrate. Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures (MQWHs) were deposited by low temperature metal organic vapour phase epitaxy (MOVPE) in a commercial reactor system on nominally exact (001) Si substrates. In order to realise III/V laser diode the MQWH layer-stack was embedded in 1mum thick (BGa)P separate confinement structure (SCH) layers. Structure investigation proved that a precise strain-management allows for the deposition of thick III/V devices without the formation of cracks or misfit dislocations. First gain measurements at room temperature using the stripe-length method show a modal gain of more than 20cm-1 of the active Ga(NAsP) material monolithically integrated on Si substrates, which was discussed in detail.
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