Abstract
AbstractGaN/InGaN multi quantum wells (MQWs) were grown on silicon (Si) substrates by Metalorganic Vapor Phase Epitaxy (MOVPE). A structure of layers consisting of AlN, AlGaN and GaN was used for subsequent deposition of the MQW structures on Si substrates. The Al pre‐deposition time before growing the buffer structure and its effect on the formation of cracks was investigated. The emitted wavelength of the structure was changed by varying the thickness of the Mg‐doped AlGaN electron blocking layer, by reducing the growth temperature of the MQW structure and by increasing the QW width of the structure. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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