Abstract
The optical properties of silicon have been determined from 0.2 to 6.5 eV at room temperature, using reflectance spectra of silicon-on-insulator (SOI) and ellipsometric spectra of homoepitaxial samples. Optimized Fabry-Perot-type SOI resonators exhibit high finesse even in near ultraviolet. Very high precision values of the real part of the refractive index are obtained in infrared up to a photon energy of 1.3 eV. The spectra of the extinction coefficient, based on observations of light attenuation, extend to 3.2 eV due to measurements on SOI layers as thin as 87 nm. These results allowed us to correct spectroellipsometric data on homoepitaxial samples for the presence of reduced and stabilized surface layers.
Highlights
Optical measurements on silicon and Si-based structures are important in both basic and applied research, and in many branches of current technology
The optical properties of silicon are of considerable interest for characterization purposes
Efforts to replace the international kilogram prototype using silicon spheres recently revealed that almost a quarter of the uncertainties
Summary
Optical measurements on silicon and Si-based structures are important in both basic and applied research, and in many branches of current technology. The optical properties of silicon are of considerable interest for characterization purposes for solar cells and photodetectors, in microelectronics, etc. Efforts to replace the international kilogram prototype using silicon spheres recently revealed that almost a quarter of the uncertainties of the determination of the Avogadro number has been related to the surface,[1] with surface mapping provided by spectroellipsometry. Were subsequently corrected for the presence of overlayers, using the SOI data
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