Optical fingerprints of Y2 ordering in III–V ternary semiconductor alloys

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In this paper, we report the Y2 ordering induced changes in the crystal field splitting, spin–orbit splitting and band gap for AlxGa1−xAs, GaxIn1−xAs, GaxIn1−xP, GaAsxSb1−x and InPxSb1−x using first-principles calculations. These values and the valence band splittings E12, E13 for these materials are provided as a function of the ordering parameter η. The trends of these properties among materials are explained. The optical fingerprints of Y2 ordering are then compared with those of other available structures and the experimental data.